1/4 2011.11 - rev.a bi direction esd protection diode rsb6.8zs ? applications ? dimensions (unit : mm) esd protection ? features 1)ultra small mold type.(gmd2) 2)bi-directionality. 3)high reliability. 4)by chip-mounter,automatic mounting is possible. ? land size figure (unit : mm) ? structure ? constructions silicon epitaxial planer ? absolute maximum ratings (ta=25 c) symbol unit p mw tj c tstg c topor c ? electrical characteristics (ta=25 c) symbol min. typ. max. unit v z 5.78 - 7.82 v i z =1ma i r - - 0.5 a v r =3.5v parameter conditions zener voltage reverse current storage temperature ? 55 to + 150 operation temperature range ? 55 to + 150 junction temperature 150 ? taping dimensions (unit : mm) parameter limits power dissipation 100 gmd2 0.31 0.38 0.23 jedec : - rohm : gmd2 jeita : - dot(year week factory) 8 0.38 0.03 0.6 0.05 0 0.03 0.19 0.03 0.3 0.06 0.27 0.03 0.27 0.03 data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rsb6.8zs 2/4 2011.11 - rev.a 0.001 0.01 0.1 1 10 6 6.2 6.4 6.6 6.8 7 7.2 7.4 7.6 ta= ? 25 c ta=125 c ta=75 c ta=25 c zener current:iz(ma) zener voltage:vz(v) vz - iz characteristics(1) apply voltage 0.001 0.01 0.1 1 10 6 6.2 6.4 6.6 6.8 7 7.2 7.4 7.6 ta= ? 25 c ta=125 c ta=75 c ta=25 c zener current:iz(ma) zener voltage:vz(v) vz - iz characteristics(2) apply voltage 0.01 0.1 1 10 100 1000 10000 100000 0 1 2 3 4 5 ta=125 c ta=25 c ta=75 c reverse current:i r (pa) reverse voltage v r (v) v r -i r characteristics(1) apply voltage 0.01 0.1 1 10 100 1000 10000 100000 0 1 2 3 4 5 ta=125 c ta=25 c ta=75 c reverse current:i r (pa) reverse voltage v r (v) v r -i r characteristics(2) apply voltage 1 10 0 1 2 3 4 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics(1) f=1mhz apply voltage 1 10 0 1 2 3 4 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics(2) f=1mhz apply voltage www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rsb6.8zs 3/4 2011.11 - rev.a 6.7 6.8 6.8 6.9 6.9 7.0 7.0 7.1 7.1 7.2 7.2 zener voltage:vz(v) ta=25 c i z =1ma n=30pcs ave:6.93v vz dispersion map ave:7.04v apply voltage apply voltage 50 55 60 65 70 75 80 85 90 95 100 reverse current:i r (pa) ta=25 c v r =3.5v n=30pcs ave:88.9pa i r dispersion map ave:63.2pa apply voltage 0 1 2 3 4 5 6 7 8 capacitance between terminals:ct(pf) ta=25 c f=1mhz v r =0v n=10pcs ct dispersion map ave 6.17pf ave 6.19pf apply voltage 1 10 100 1000 0.1 1 10 dynamic impedance:zz( ) zener current(ma) zz - iz characteristics(1) apply voltage 1 10 100 1000 0.1 1 10 dynamic impedance:zz( ) zener current(ma) zz - iz characteristics(2) apply voltage 10 100 1000 0.001 0.01 0.1 1 10 100 1000 transient thermal impedance rth( c /w) rth(j - a) rth(j - c) on glass - epoxy substrate time:t(s) rth - t characteristics www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rsb6.8zs 4/4 2011.11 - rev.a 0 5 10 15 20 25 30 ave 15.1kv ave 27.9kv c=200pf r=0 c=150pf r=330 c=100pf r=1.5k ave 2.0kv electrostatic discharge test esd [kv] esd dispersion map(1) apply voltage 0 5 10 15 20 25 30 ave 22.2kv ave 29.1kv c=200pf r=0 c=150pf r=330 c=100pf r=1.5k ave 2.0kv electrostatic discharge test esd [kv] esd dispersion map(2) apply voltage www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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